FABRICATION TOOLS

DRIE

Alcatel AMS 100 Deep Reactive Ion Etcher

Located: Chapman Hall – Cleanroom

Uses: Allows for a highly anisotropic etch process used to create deep,steep-sided holes and trenches in substrates.

Specifications:
The DRIE utilizes an inductively coupled plasma, ICP, and fluorine gas chemistries to etch features, typically in silicon or SiO2, with:

  • High aspect ratios
  • Vertical to near vertical sidewall edges, profile angles close to 90°.
  • Capability: 4 inch wafer, 6 inch

Deep Reactive Ion Etcher

ALD

Atomic Layer Deposition: Ultratech/Cambridge Nanotech Savannah S200

Located: Chapman Hall Cleanroom and 312 Chapman Hall

Uses: Deposition of highly conformal metal-oxide films with precisely controlled thickness on planar substrates and high-aspect ratio features.

Specifications:

  • Oxygen sources: H2O and ozone
  • Reactor temperature: up to 300 C
  • Maximum substrate diameter: 8”
  • Total precursor ports: 6
  • Low vapor pressure (LVP) precursor delivery option
  • Nitrogen carrier gas purified to sub-parts-per billion (ppb)

Atomic Layer Deposition

PECVD

Advanced Vacuum Vision 310 Plasma Enhanced Chemical Vapor Deposition System

Located: Chapman Hall – Cleanroom

Uses: The PECVD system can deposit low stress silicon nitride and silicon dioxide films.

Specifications:
The PECVD is equipped with a patented dual frequency generator, 500W at 187 kHz and 300W at 13.56 MHz, that allows for the deposition of low stress films. The sample plate can accommodate samples up to 250 mm in diameter, and has temperature control from 30ºC to 300ºC. The system is equipped with seven digital mass flow controllers with bypass and flush capabilities and up and downstream isolation valves.


Plasma Enhanced Chemical Vapor Deposition System

Metal Sputtering

Kurt Lesker PVD 75

Located: Chapman Hall – Cleanroom

Uses: The PVD 75 magnetron sputtering system is used for deposition of metals and metal oxides.

Specifications:

  • Magnetron sputtering, DC and RF
  • Materials available: Ag, Al, Au, Co, Cr, Cu, Fe, Ni, and Ti.
  • Substrate Temperature: 25ºC to 350ºC
  • Gases: Argon and Oxygen
  • Deposition rate: 0.5 – 2.0 A/s


Metal Sputtering

Electron Beam Evaporator

Thermionics VE-100

Located: Chapman Hall – Cleanroom

Uses: E-beam evaporation for high quality metal films

Specifications:

  • 3 kW e-Gun evaporation source
  • Base pressure: ~3E-8 torr
  • 4 crucible pockets
  • Water cooled substrate holder
  • Materials Available: Ag, Al, Au, Cr, and Ti.


Electron Beam Evaporator

Mask Aligner

Karl Suss MA6/BA6

Located: Chapman Hall – Cleanroom

Uses: The mask aligner allows you to expose a photoresist through a mask to generate a pattern.

Specifications:

  • Frontside and Backside Alignment
  • Up to 6" substrates
  • 350W lamp, 365nm and 405 nm, calibrated
  • A variety of chucks and mask holders available
  • Class 100 area
  • Resolution-2-3 µm in air
  • Alignment Accuracy TSA 0.5 µm, BSA 1 µm


Mask Aligner

Hot Embosser

JenOptik HEX03

Located: Chapman 313

Uses: Embosses a mold into a thermoplastic material at temperatures above its glass transition temperature with an applied force. Temperatures up to 320º, pressures up to 20 tons, front and backside embossing with alignment, with capabilities of embossing features on the micron and nanoscale.

Typical substrate materials:
Polymers such as PMMA, polycarbonate, polystyrene

Typical stamp materials:
Brass, nickel, silicon, glass

Specifications:

  • Maximum force: 200 kN
  • Max operating temperature: 320º C
  • Vacuum chamber < 1 mbar
  • Typical press velocity 1 mm/min
  • Class 100 area
  • Substrate area Up to 7º


Hot Embosser

Laser Ablation

Resonetics Rapid X250

Located: Chapman Hall 313

Uses: The Resonetics Rapid X250 uses a pulsed laser to ablate material according to the CAD file provided. Laser operates at 248 nm or 193 nm. It can ablate plastics, glass, ceramics, and some metals with minimum feature size ~10 um.

Specifications:

  • Wavelength: ArF – 193 nm, KrF – 248 nm
  • Maximum output power: ArF – 12 W, KrF – 30 W
  • Maximum pulse energy @ 100 Hz: ArF – 120 mJ, KrF – 300 mj
  • Typical operating pulse energy: ArF – 96 mJ, KrF – 240 mj
  • Repetition rate: ArF – 1-100 Hz, KrF – 1-100 Hz
  • Pulse duration: ArF – 20 ns, KrF – 20 ns
  • Typical usable beam: ArF – 16.0 mm x 3.4 mm, KrF – 16.0 mm x 4.7 mm


Laser Ablation

PLD

PVD Products Nano-PLD-1000 Pulsed Laser Deposition System

Located: Chapman Hall 312

Uses: Deposits uniform thin films by focusing a high power pulsed laser beam on a target of the desired composition to vaporize the target material and deposited it as a thin film on a substrate.

Specifications:

  • Laser Operation Wavelength: 248 nm, KrF
  • Maximum Substrate Size: 2 inch
  • Maximum Substrate Temperature: 950°C, in oxygen with 6 8°C uniformity over 2 inch sample
  • Silicon carbide oxygen resistant rotating substrate heater
  • Computerized selection and rastering of the active ablation target, to maximize target utilization, as well as continuous target rotation up to 50 RPM
  • Combinatorial thin film growth software allows for continuous, binary, ternary, and quaternary compositional spreads across 2 inch diameter substrates by indexing both the target and substrate in the appropriate fashion.


Pulsed Laser Deposition System

Stylus Profiler

KLA Tencor P-6

Located: Chapman Hall – Cleanroom

Uses: The P-6 Stylus profiling system provides high resolution 2D and 3D analysis of surface topography. The analysis software can calculate a variety of surface parameters including step height, surface roughness and waviness.

Specifications:

  • Tip radius: 2 um
  • Vertical resolution: ~ 0.1 nm
  • Lateral resolution: 0.5 um
  • Maximum vertical range: 324 um
  • Stage diameter: 6”


Stylus Profiler

Thin-Film Mapper

Filmetrics F50

Located: Chapman Hall – Cleanroom

Uses: The Filmetrics F50 is used to measure thickness of dielectrics, semiconductors, and thin, ~10nm, metal films. Measured films must be smooth and between 10nm and 70 microns thick. Optical constants, n and k, can also be measured on a variety of dielectric films. Commonly measured films include oxides, nitrides and photoresists. Films that can not be measured include very rough films and thick metal films.


Thin-Film Mapper

Oxygen Plasma System

AutoGlow by Glow Research

Located: Chapman Hall – Cleanroom

Uses: The AutoGlow system is used for etching and cleaning surfaces or for surface activation processes. An oxygen plasma is generated using a 300 W RF power supply that can operate at powers between 10 – 300 W. The unit can handle 4” wafers or smaller.

Commonly used materials: Glass, Metals, Semiconductors, Polymers

Applications:

  • Stripping of photoresist
  • Ultra-cleaning of surfaces
  • Wetability alteration
  • Sample preparation for electron microscopy
  • Treatment of surfaces to improve adhesion

Oxygen Plasma System

Atmospheric Oven

Fischer Scientific Isotemp Oven

Located: Chapman Hall – Cleanroom

Specifications:

  • Temperature range: 50 – 275 °C
  • Forced air for more uniform heating
  • Uniformity at 200 °C: +-3°C
Atmospheric Oven

Optical Microscope

Nikon Eclipse LV150

Located: Chapman Hall – Cleanroom

Uses: The Nikon Eclipse LV150 is capable of magnifications from 50-1000X. Images can be captured with the attached digital camera and analyzed with the NIS-Elements imaging software.

  • Magnification: 50-1000x
  • Bright-field and dark-field modes
  • Wetability alteration
  • 6” x 6” stage
  • Top-side lighting
  • Objective Lens/Numerical Aperture: 5x/0.15, 10x/0.30, 20x/0.45, 50x/0.80, 100x/0.90

Optical Microscope

CONTACT US

Chapel Hill Analytical & Nanofabrication Laboratory
243 Chapman Hall, CB# 3216
University of North Carolina
Chapel Hill, NC 27599-3216

cdonley@email.unc.edu
919-843-2859
919-843-8412

Chapman Hall

Chapman Hall at the University of North Carolina