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Instrumentation
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AFM (Asylum Research MFP3D Atomic Force Microscope)
Located: Chapman B30
Uses: Allows the user to generate a topological image of their sample by rastering a tip across the surface.
Status: Installed
Specifications:
The MFP3D has multiple imaging modes including: Contact, constant force, constant height, lateral force, non-contact, AC (tapping), phase, Dual ACTM, Magnetic, electric force, and conductive AFM imaging. Non-imaging modes include: Force, force/Distance spectroscopy, force volume mapping, nanolithography and nanomanipulation, and Current/Voltage (I/V) spectroscopy.
The scanner allows for scan sizes as large as 90 µm, and a vertical range of 15 µm. Samples can be imaged in either air or in fluid, and a series of heaters are available for temperature dependant studies (RT-300ºC in air or RT-80ºC in fluid). The ORCA module allows for current measurements between the sample and a conductive tip, and the magnetic field module can apply magnetic fields in the plane of the sample. In addition, the AFM head can be mounted on our inverted optical microscope to do simultaneous optical and AFM measurements.
AFM Operation Checklist
AFM Image Processing |
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Last Updated on Tuesday, 06 October 2009 13:29 |
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 ASML 193 Stepper (ASML 5500/950B 193nm Stepper)
Located: NC State University Nanofabrication Facility (The ASML 193 Stepper is part of the Triangle National Lithography Center (TNLC), a joint venture between NC State University and UNC-Chapel Hill.)
Uses: The scanner allows you to pattern a photoresist layer by exposing it to 193nm light through a photomask.
Status: Installed
Specifications:
The ASML 5500/950B, in the Triangle National Lithography Center (TNLC), is a state-of-the-art, 193 nm optical lithography system for rapid turnaround time and high volume patterning. This scanner is housed in the Class 100 facilities within NC State's Nanofabrication Facility (NNF). The NNF provides auxiliary capabilities: resist coating, developing, descum, and trim. The scanner specifications include 130 nm resolution (half-pitch) and < 40 nm alignment, with a 26 mm x 33 mm field size. The tool is currently configured for 150 mm wafers.
Contact:
Marcio Cerullo
Coordinator, TNLC
919-515-5054
Email:
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Last Updated on Tuesday, 15 April 2008 10:23 |
 Olympus Microscope with CARVII spinning disc confocal system
Located: Chapman Hall – B30
Uses: This microscope can do a number of different experiments including confocal, widefield fluorescence, brightfield, DIC and phase imaging.
Status:Installed
Objectives:
10x
20x
40x
60x water
1.2 NA
100x oil
1.3 NA
100x oil
1.4 NA
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Filter Set
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Excitation |
Emission |
| DAPI |
381-393nm |
417-477nm |
| GFP |
464-500nm |
516-556nm |
| TxRED |
542-582nm |
604-644nm |
| Camera |
Resolution |
Sensitivity |
Maximum Frame Rate |
| Hamamatsu ORCA |
High (1344 x 1024) |
Medium |
~5 full frames/sec |
| Photometrics QuantEM |
Medium (512 x 512) |
High |
~30 full frames/sec |
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Last Updated on Tuesday, 06 October 2009 15:13 |
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DRIE (Alcatel AMS 100 Deep Reactive Ion Etcher)
Located: Chapman Hall - Cleanroom
Uses: Allows for a highly anisotropic etch process used to create deep,steep-sided holes and trenches in substrates.
Status: Installed
Specifications:
The DRIE utilizes an inductively coupled plasma (ICP) and fluorine gas chemistries to etch features (typically in silicon or SiO2) with:
- High aspect ratios
- Vertical to near vertical sidewall edges (profile angles close to 90°).
- Capability: 4 inch wafer, 6 inch
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Last Updated on Tuesday, 06 October 2009 13:38 |
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EDS (Oxford instruments, INCA PentaFET -x3) Located: Hitachi S-4700 (Chapman 030A) and FEI Helios 600 Nanolab (Chapman 030B)
Uses: Obtain site specific semi-quantitative elemental analysis of samples.
Status: Installed
Features:
- Si(Li) detector
- 30mm2 allows to collect data upto 3x the traditional 10mm2 Si(Li) detector.
- Excellent low energy performance and the ability to detect elements down to Be.
- INCA energy software is based around a Navigator and can be run on the Analyser, Point and ID and Mapping mode.
- INCA PentaFet –x3 is installed on the Hitachi S-4700 FESEM and the FEI Helios 600 Nanolab Dual Beam FIB System.
EDS Training Guide
EDS Operation Checklist for Hitachi S-4700
EDS Operation Checklist for FEI Helios 600 Nanolab |
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Last Updated on Tuesday, 06 October 2009 13:27 |
 Ellipsometer (J. A. Woollam Variable Angle Spectroscopic Ellipsometer)
Located: Chapman Hall - B04
Uses: Allows a very precise determination of film thicknesses when the optical constants of the films are known.
Status: Installed
Specifications:
- Spectral Range: 250-2300 nm (250-1700 nm at angles 20° to 90°; 1700-2300 nm at angles 35° to 90°)
- Focusing optics are available to reduce the beam size to 100 mm for wavelengths between 250-1700 nm and angles between 20°-90°.
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Last Updated on Tuesday, 06 October 2009 13:30 |
 ESEM (FEI Quanta 200 Field Emission Gun)
Located: Chapman Hall – B30
Uses: To obtain secondary & backscatter electron images of materials, polymers and biological samples at relatively low pressures (upto 5 Torr).
Status: Installed
Specifications:
FEI Quanta 200 FEG is a ESEM with a shottky field emission gun. ESEM mode enables analysis of non-conductive samples.
- Accelerating voltage = 0.5 to 30kV
- Operation Modes: High vacuum (HV), Low vacuum(LV) and Environmental SEM (ESEM)
- Magnification: HV & LV mode:7x-1 million x
- Resolution: HV & ESEM mode: 3.5nm at 30kV. LV mode: 15nm at 3kV
- Tilt Angle: -15°- + 75°
- Eucentric Goniometer Stage: x=50mm,y=50mm, z-clearance=55mm
- Equipped with a Peltier stage for in-situ studies of wet sample (-20°C - 100°C)
ESEM Operation Checklist:
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Last Updated on Tuesday, 27 October 2009 13:58 |
 FIB (FEI Helios 600 Nanolab Dual Beam System)
Located: Chapman Hall - Chapman B30
Uses: The dual electron and ion beam system allows for simultaneous SEM imaging and ion beam patterning (selective removal or addition of material).
Status: Installed
Ion Beam Specifications:
- The Sidewinder FIB column consists of a gallium liquid metal ion source (LMIS).
- Resolution: 5nm
- Max horizontal field width: 2.5mm @ 5kV (corresponds to 50x minimum magnification)
- Accelerating voltage: 1 – 30 kV
- Probe current: 1.5 pA - 20 nA
Electron Beam Specifications:
The field emission electron column is equipped with an ultra-high brightness emitter and magnetic immersion lens technology.
- Resolution: 0.9 nm at 15 kV, 1.5 nm at 1 kV
- Accelerating voltage: 0.5 – 30 kV
- Beam current: 20 nA
- Detection: in-lens SE and BSE
Gas Injection System (GIS) Capabilities:
5 GIS ports available
Currently available GIS chemistries:
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- I nsulator Deposition (TEOS)
- Platinum Deposition (ion or electron beam deposition)
- Tungsten Deposition (ion or electron beam deposition)
- Insulato r Enhanced Etch (XeF 2): selectively removes insulating materials while inhibiting the removal of conducting materials
FIB Operation Checklist
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Last Updated on Wednesday, 30 September 2009 12:21 |
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Mask Aligner: Karl Suss MA6/BA6
Location: Chapman Hall Cleanroom
Description: The mask aligner allows you to expose a photoresist through a mask to generate a pattern.
- Frontside and Backside Alignment
- Up to 6 “ substrates
- 350W lamp, 365nm and 405 nm (calibrated)
- A variety of chucks and mask holders available
- Class 100 area
- Resolution-2-3 µm in air , <1 µm in vacuum
- Alignment Accuracy TSA 0.5 µm, BSA 1 µm
Mask Aligner Operation Checklist |
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Last Updated on Wednesday, 30 September 2009 12:21 |
 PECVD (Advanced Vacuum Vision 310 Plasma Enhanced Chemical Vapor Deposition System)
Located: Chapman Hall - Cleanroom
Uses: The PECVD system can deposit low stress silicon nitride and silicon dioxide films.
Status: Installed
Specifications:
The PECVD is equipped with a patented dual frequency generator (500W at 187 kHz and 300W at 13.56 MHz) that allows for the deposition of low stress films. The sample plate can accommodate samples up to 250 mm in diameter, and has temperature control from 30ºC to 300ºC. The system is equipped with seven digital mass flow controllers with bypass and flush capabilities and up and downstream isolation valves.
PECVD Operation Checklist
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Last Updated on Wednesday, 07 October 2009 17:35 |
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PLD (PVD Products Nano-PLD-1000 Pulsed Laser Deposition System)
Located: Chapman Hall - Cleanroom
Uses: Deposits uniform thin films by focusing a high power pulsed laser beam on a target of the desired composition to vaporize the target material and deposited it as a thin film on a substrate.
Status: Installed.
Specifications:
- Laser Operation Wavelength: 248 nm (KrF)
- Maximum Substrate Size: 2 inch
- Maximum Substrate Temperature: 950°C (in oxygen) with 6 8°C uniformity over 2 inch sample
- Silicon carbide oxygen resistant rotating substrate heater
- Computerized selection and rastering of the active ablation target (to maximize target utilization) as well as continuous target rotation up to 50 RPM
- Combinatorial thin film growth software allows for continuous, binary, ternary, and quaternary compositional spreads across 2 inch diameter substrates by indexing both the target and substrate in the appropriate fashion.
PLD Operation Checklist
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Last Updated on Tuesday, 27 October 2009 13:57 |
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Instrumentation
