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microscopy
fabrication
spectroscopy

ALD

Description:
Location:
Uses:

Deposition of highly conformal metal-oxide films with precisely controlled thickness on planar substrates and high-aspect ratio features.

Specifications:

Precursors typically available: H20 plus: Al, Ti, Zn, and Zr
Reactor temperature: up to 190C
Maximum substrate diameter: 8”
Total precursor ports: 6
Nitrogen carrier gas purified to sub-parts-per billion (ppb)

Download Operating Procedure