ALD
Location: Chapman 144
Uses:
Deposition of highly conformal metal-oxide films with precisely controlled thickness on planar substrates and high-aspect ratio features.
Specifications:Precursors typically available: H20 and O3 plus: Al, SiO2, Ti, Zn
Reactor temperature: up to 190C
Maximum substrate diameter: 8”
Total precursor ports: 6
Nitrogen carrier gas purified to sub-parts-per billion (ppb)
