Location: Chapman Hall - Cleanroom
Allows for a highly anisotropic etch process used to create deep,steep-sided holes and trenches in substrates.Specifications:
The DRIE utilizes an inductively coupled plasma, ICP, and fluorine gas chemistries to etch features, typically in silicon or SiO2, with:
High aspect ratios
Vertical to near vertical sidewall edges, profile angles close to 90°.
Capability: 4 inch wafer, 6 inch