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DRIE

Description: Alcatel AMS 100 Deep Reactive Ion Etcher
Location: Chapman Hall - Cleanroom
Uses:

Allows for a highly anisotropic etch process used to create deep,steep-sided holes and trenches in substrates.

Specifications:

The DRIE utilizes an inductively coupled plasma, ICP, and fluorine gas chemistries to etch features, typically in silicon or SiO2, with:

High aspect ratios
Vertical to near vertical sidewall edges, profile angles close to 90°.
Capability: 4 inch wafer, 6 inch

Download Operating Procedure